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If they will not make out a prima facie case, the next issue to raise is whether you will give any evidence of your own. This is also a matter of the interests of the others. If they have a prima facie case, or an appearance of such a case, and will not give evidence, you have every right to not give evidence yourself, and to raise the question of self-defense, even though you may not have much of that defense. The rule is that a defendant in a criminal case may not be compelled to testify in his own behalf, nor to introduce evidence if he so desires. In the case at bar, the defendants would not have been allowed to introduce any evidence without violating that rule. The defendants having exercised their right not to take the stand in their own behalf, the state may not offer testimony to rebut their statement. The only evidence that the state could offer would be that of the owner of the coal mine. The state argues that the coal mine owner, if called to the stand, would have testified that the defendants offered to sell him gold and silver. If the defendants were called to testify, they would deny having made such an offer. Such evidence would be hearsay. However, the state may not call any witness to testify to the truth of the defendants' statement. They may show what they have been told, but they cannot call the informant to swear as to the truth of the statement. If the state calls the informant to testify as to what the defendants told him, the defendants would have the right of cross-examination, and to contradict or impeach his statements by the fact that they deny having made such an offer, or that they refused to make an investigation of the mine. Such evidence would be admissible. In the case at bar, the question of a prima facie case should not be decided by the court as a matter of law. It is a question to be decided by the jury, and the state has no right to offer any testimony as to the truth of the statement without violating the defendants' rights by calling a person as a witness who is at liberty and was not called by the defendants, and is not here to be questioned by the defendants or their counsel. The trial court erred in not What's New In? An integral part of the fabrication process of semiconductor chips is the actual fabrication of contacts between the device regions and contact regions of the wafer. Normally, the active device regions are arranged in a plurality of device regions in a matrix pattern over the wafer. An active region is a region of the wafer in which actual semiconductor elements are formed, e.g. chips. Contact regions are regions in which contacts to the active regions are to be fabricated. Contact regions are part of contacts and the substrate area of the wafer. Contacts are also used, for example, in the metallization of a chip and to provide contacts to a package to which a chip is mounted. In the case of conventional self-aligned contact processes, a gate oxide is deposited over the active regions in a matrix form, for example, on the order of 1,500 active regions per cm2. In addition, a polysilicon layer is deposited over the gate oxide. Subsequently, a trench is etched in the polysilicon layer and the exposed gate oxide is removed. Afterward, a spacer is formed on the side wall of the trench in the polysilicon layer to form a hard mask for the etch of the contact region. Subsequently, the trench is etched back and chemical mechanical polishing is used to remove the polysilicon located in the trench to expose the gate oxide. The width of the trench is set such that the contacts to active regions of different transistors, e.g., PMOS and NMOS transistors, are offset from each other in a line arrangement. This is typically referred to as self-alignment. Then the dielectric between the contacts is etched back to form a planar surface in which subsequently the contact plugs, e.g. tungsten, are formed. The geometry of the transistor structures in very small dimensions is called multi-gate transistor technology. Depending on the gate electrode structure, multi-gate transistors can be sub-classified into, for example, tri-gate transistors and quad-gate transistors. The gate electrodes of both tri-gate and quad-gate transistors normally have a planar structure. FIG. 1 schematically shows a planar structure of a gate electrode in a tri-gate transistor. The tri-gate transistor comprises a transistor array 7 in which a plurality of MOS transistors, in this case PMOS transistors, are formed in an active region of a substrate 6 and protected by a gate oxide System Requirements: ***Please note*** Win7 is currently the only OS we support, while we continue to support the majority of other OS's. 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